II-VI relying on GE’s IP to conquer power SiC markets
As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to moving into power device and module manufacturing. Just like II-VI’s main competitors in the SiC wafer market […]