As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to moving into power device and module manufacturing. Just like II-VI’s main competitors in the SiC wafer market – US-based Cree/Wolfspeed and Japan-based Rohm Group Company (including SiCrystal) – the new licensee aims to capitalize on the growing market demand for SiC-based power electronics, driven by the fast development of electric vehicle and hybrid electric vehicle (EV/HEV) applications.
https://i1.wp.com/mtgelectronics.com/wp-content/uploads/2020/07/shutterstock_108949013.jpg?fit=500%2C373&ssl=1 373 500 admin https://mtgelectronics.com/wp-content/uploads/2020/07/MTG-logo-for-site-300x100-1.png admin2020-07-08 19:26:572020-07-08 19:34:28II-VI relying on GE’s IP to conquer power SiC markets
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