GaN & SiC Discretes b

Solid State Devices Releases Hermetic Dual GaN FET PN SGF30E100Z8

La Mirada, CA – Solid State Devices, Inc. (SSDI) continues to expand its hermetic GaN Power FETs line with the SGF30E100Z8, a 1000 volt dual GaN FET. When used in a half bridge configuration, this device delivers 15 amps of continuous drain current, but can also be connected in parallel to achieve 30 amps. Similar to SSDI’s other GaN offerings, the very fast switching SGF30E100Z8 has a low gate charge of 10 nC max and a low RDS(on) of 160 mΩ typ.

Source: News 2020-09-21: SGF30E100Z8