II-VI relying on GE’s IP to conquer power SiC markets

As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to moving into power device and module manufacturing. Just like II-VI’s main competitors in the SiC wafer market – US-based Cree/Wolfspeed and Japan-based Rohm Group Company (including SiCrystal) – the new licensee aims to capitalize on the growing market demand for SiC-based power electronics, driven by the fast development of electric vehicle and hybrid electric vehicle (EV/HEV) applications.

Source: II-VI relying on GE’s IP to conquer power SiC markets