Gallium nitride (GaN) switch technology has enabled a major advance in the miniaturization of chargers and adapters. GaN transistors switch very efficiently. This allows the development of converters that can either operate at much higher switching frequency than a circuit using equivalent silicon devices, potentially reducing transformer size, or provide solutions that deliver significant system efficiency improvements, reducing or eliminating the need for heat sinks.
https://i0.wp.com/mtgelectronics.com/wp-content/uploads/2020/05/Passives.jpg?fit=733%2C489&ssl=1 489 733 admin https://mtgelectronics.com/wp-content/uploads/2021/03/MTG-logo-for-site-300x100-1.png admin2020-06-11 08:02:282020-06-27 07:37:39GaN Enabling a Revolution in Charger Design
- Enics Merges with GPV to Create a European Electronics GiantJune 23, 2022 - 1:11 pm
- Panthronics announces integrated listener for NFC wireless charging cuts board footprintJune 22, 2022 - 9:00 am
- EOL: The Chip Shortage You Don’t See ComingJune 21, 2022 - 3:24 pm
- Investing in Harsh Environment Solutions for Oil & Gas ExplorationJune 21, 2022 - 2:25 pm