Gallium nitride (GaN) switch technology has enabled a major advance in the miniaturization of chargers and adapters. GaN transistors switch very efficiently. This allows the development of converters that can either operate at much higher switching frequency than a circuit using equivalent silicon devices, potentially reducing transformer size, or provide solutions that deliver significant system efficiency improvements, reducing or eliminating the need for heat sinks.
https://i0.wp.com/mtgelectronics.com/wp-content/uploads/2020/05/Passives.jpg?fit=733%2C489&ssl=1 489 733 admin https://mtgelectronics.com/wp-content/uploads/2020/07/MTG-logo-for-site-300x100-1.png admin2020-06-11 08:02:282020-06-27 07:37:39GaN Enabling a Revolution in Charger Design
You might also like
- The world is dangerously dependent on Taiwan for chips January 27, 2021 - 10:24 am
- DARPA asks industry for linear accelerator bomb disposal package inspection solutionsJanuary 27, 2021 - 9:32 am
- Raytheon fears Biden will cancel $500M arms sale to Saudi ArabiaJanuary 27, 2021 - 9:22 am
- Lockheed Marin 4Q 2020 Earnings OverviewJanuary 27, 2021 - 9:19 am