Researchers at Pohang University of Science and Technology (POSTECH) exploit resistive switching property in halide perovskite materials to develop the basis for a new type of fast, low-power, nonvolatile memory. Halide perovskite materials exhibit a resistive switching property, which means that with the application of a voltage, the substance’s resistance will change.
https://i2.wp.com/mtgelectronics.com/wp-content/uploads/2020/07/shutterstock_175650233-scaled.jpg?fit=2560%2C1707&ssl=1 1707 2560 admin https://mtgelectronics.com/wp-content/uploads/2020/07/MTG-logo-for-site-300x100-1.png admin2020-07-20 08:45:592020-07-20 08:47:15Choosing Between 2D and 3D Materials for Next-Gen Semiconductors
- The world is dangerously dependent on Taiwan for chips January 27, 2021 - 10:24 am
- DARPA asks industry for linear accelerator bomb disposal package inspection solutionsJanuary 27, 2021 - 9:32 am
- Raytheon fears Biden will cancel $500M arms sale to Saudi ArabiaJanuary 27, 2021 - 9:22 am
- Lockheed Marin 4Q 2020 Earnings OverviewJanuary 27, 2021 - 9:19 am