Choosing Between 2D and 3D Materials for Next-Gen Semiconductors 

Researchers at Pohang University of Science and Technology (POSTECH) exploit resistive switching property in halide perovskite materials to develop the basis for a new type of fast, low-power, nonvolatile memory. Halide perovskite materials exhibit a resistive switching property, which means that with the application of a voltage, the substance’s resistance will change.

Source: Choosing Between 2D and 3D Materials to Set Off the Commercialization of Next-Gen Semiconductors – News