Power electronics has taken an interesting road with the adoption of GaN and SiC. Yole Développement (Yole) estimated a general view of these wide bandgap materials. While silicon is still dominating the market, GaN and SiC devices are already more efficient solutions in some applications. From a development standpoint, SiC research is focused on SiC wafer quality on larger diameters and power module development. In the GaN field, the main trends are on GaN device integration — either system-in-package or system-on-chip solutions.
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